规格书 |
SP(P,I,A)20N60C3 |
Rohs | Lead free / RoHS Compliant |
产品培训模块 | |
标准包装 | 500 |
FET 型 | MOSFET N-Channel, Metal Oxide |
FET特点 | Standard |
漏极至源极电压(VDSS) | 650V |
电流-连续漏极(编号)@ 25°C | 20.7A |
Rds(最大)@ ID,VGS | 190 mOhm @ 13.1A, 10V |
VGS(TH)(最大)@ Id | 3.9V @ 1mA |
栅极电荷(Qg)@ VGS | 114nC @ 10V |
输入电容(Ciss)@ Vds的 | 2400pF @ 25V |
功率 - 最大 | 208W |
安装类型 | Through Hole |
包/盒 | TO-220-3 |
供应商器件封装 | PG-TO220-3 |
包装材料 | Tube |
包装 | 3TO-220AB |
通道模式 | Enhancement |
最大漏源电压 | 600 V |
最大连续漏极电流 | 20.7 A |
RDS -于 | 190@10V mOhm |
最大门源电压 | ±20 V |
典型导通延迟时间 | 10 ns |
典型上升时间 | 5 ns |
典型关闭延迟时间 | 67 ns |
典型下降时间 | 4.5 ns |
工作温度 | -55 to 150 °C |
安装 | Through Hole |
标准包装 | Rail / Tube |
产品种类 | MOSFET |
RoHS | RoHS Compliant |
晶体管极性 | N-Channel |
漏源击穿电压 | 600 V |
源极击穿电压 | +/- 20 V |
连续漏极电流 | 20.7 A |
抗漏源极RDS ( ON) | 0.19 Ohms |
配置 | Single |
最高工作温度 | + 150 C |
安装风格 | Through Hole |
封装/外壳 | TO-220AB |
封装 | Tube |
下降时间 | 4.5 ns |
最低工作温度 | - 55 C |
功率耗散 | 208 W |
上升时间 | 5 ns |
工厂包装数量 | 500 |
零件号别名 | SP000013527 SPP20N60C3HKSA1 SPP20N60C3XKSA1 |
P( TOT ) | 208W |
匹配代码 | SPP20N60C3 |
R( THJC ) | 0.6K/W |
LogicLevel | NO |
单位包 | 50 |
标准的提前期 | 14 weeks |
最小起订量 | 50 |
Q(克) | 114nC |
LLRDS (上) | n.s.Ohm |
汽车 | NO |
LLRDS (上)在 | n.s.V |
我(D ) | 20.7A |
V( DS ) | 600V |
技术 | CoolMOS C3 |
的RDS(on ) at10V | 0.19Ohm |
无铅Defin | RoHS-conform |
FET特点 | Standard |
安装类型 | Through Hole |
电流 - 连续漏极(Id ) @ 25 °C | 20.7A (Tc) |
的Vgs(th ) (最大)@ Id | 3.9V @ 1mA |
漏极至源极电压(Vdss) | 650V |
供应商设备封装 | PG-TO220-3 |
开态Rds(最大)@ Id ,V GS | 190 mOhm @ 13.1A, 10V |
FET型 | MOSFET N-Channel, Metal Oxide |
功率 - 最大 | 208W |
输入电容(Ciss ) @ VDS | 2400pF @ 25V |
闸电荷(Qg ) @ VGS | 114nC @ 10V |
RoHS指令 | Lead free / RoHS Compliant |
类别 | Power MOSFET |
渠道类型 | N |
外形尺寸 | 10 x 4.4 x 9.25mm |
身高 | 9.25mm |
长度 | 10mm |
最大漏源电阻 | 0.19 Ω |
最大功率耗散 | 208 W |
每个芯片的元件数 | 1 |
包装类型 | TO-220AB |
引脚数 | 3 |
典型栅极电荷@ VGS | 87 nC V @ 10 |
典型输入电容@ VDS | 2400 pF V @ 25 |
宽度 | 4.4mm |
商品名 | CoolMOS |
系列 | SPP20N60 |
RDS(ON) | 190 mOhms |
Continuous Drain Current Id | :20.7A |
Drain Source Voltage Vds | :650V |
On Resistance Rds(on) | :190mohm |
Rds(on) Test Voltage Vgs | :10V |
Threshold Voltage Vgs | :3V |
功耗 | :208W |
Operating Temperature Min | :-55°C |
Operating Temperature Max | :150°C |
Transistor Case Style | :TO-220 |
No. of Pins | :3 |
MSL | :- |
Current Id Max | :20.7A |
Current Temperature | :25°C |
Full Power Rating Temperature | :25°C |
Junction Temperature Tj Max | :150°C |
Junction Temperature Tj Min | :-55°C |
No. of Transistors | :1 |
工作温度范围 | :-55°C to +150°C |
Power Dissipation Ptot Max | :208W |
Pulse Current Idm | :62.1A |
端接类型 | :Through Hole |
Voltage Vds | :650V |
Voltage Vds Typ | :650V |
Voltage Vgs Max | :3V |
Voltage Vgs Rds on Measurement | :10V |
Voltage Vgs th Max | :3.9V |
Weight (kg) | 0.002 |
Tariff No. | 85412900 |
案例 | TO220 |
Transistor type | N-MOSFET |
功率 | 208W |
Drain-source voltage | 650V |
极化 | unipolar |
Drain current | 20.7A |
Multiplicity | 1 |
Gross weight | 3.11 g |
Collective package [pcs] | 25 |
spg | 25 |
associated | SPP20N60C3 MC33263 EYGA121807A EYGA091203SM 120-5. SK 409/254 STS More> |
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